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bwgames
Joined: 21 Jul 2005 Posts: 36
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FRAM Writing/reading |
Posted: Mon Jul 10, 2006 3:15 am |
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Hi,
I'm trying to develop an application that uses FRAM (EEPROM) storage. I have the libraries to erase a 64byte page; erase EEPROMs, read/write a single eeprom byte and to read/write a page.
What I'm lacking is any information on how they work.
Say I want to write some data to a FRAM.
The variables I can pass to the eeprom byte writing function are the address of that specific FRAM (char), the location (as a long) and the data as a char.
What are acceptable values for the location?
Is reading it a case of supplying the same FRAM address and location?
What is an EEPROM/FRAM page? |
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Ttelmah Guest
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Posted: Mon Jul 10, 2006 5:24 am |
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The 'allowable values', are dependant on your hardware. The maximum 'location', will depend on the size of the chip, while the 'address' will depend on the address the chip is configured to use.
Yes, you supply the same address and location, and get back the value saved.
FRAM, is _not_ EEPROM. Fram, uses magnetic, as opposed to capacitive storage. This is why FRAM can be written quickly. If you are using EEPROM libraries to talk to FRAM, then make sure they do not delay after the write. EEPROM needs this, but FRAM doesn't.
Best Wishes |
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treitmey
Joined: 23 Jan 2004 Posts: 1094 Location: Appleton,WI USA
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